• I-Silicon Carbide emnyama _01
  • I-Silicon Carbide emnyama _03
  • I-Silicon Carbide emnyama _04
  • I-Silicon Carbide emnyama _02
  • I-Silicon Carbide emnyama _06
  • I-Silicon Carbide emnyama _01
  • I-Silicon Carbide emnyama _05

I-Black Silicon Carbide ifanelekile kwi-Refractory kunye nezicelo zokugaya

Ingcaciso emfutshane

I-Black Silicon Carbide iveliswa ngokudityaniswa kwesanti yequartz, i-anthracite kunye ne-silica ekumgangatho ophezulu kwiziko lokumelana nombane.Iibhloko ze-SiC ezinobuninzi be-crystal compact structure kufuphi nengundoqo zikhethwe ngokucophelela njengezinto eziluhlaza.Ngokusebenzisa iasidi egqibeleleyo kunye nokuhlamba kwamanzi emva kokutyumzwa, umxholo wekhabhoni uncitshiswe ubuncinci kwaye ke iikristale ezicwebezelayo ezikhanyayo zifunyenwe.I-brittle kwaye ibukhali, kwaye ine-conductivity ethile kunye ne-thermal conductivity.


Usetyenziso

I-Black Silicon Carbide isetyenziselwa ukwenza iibrasives ezahlukeneyo ezibotshiweyo, zokusila kunye nokupholisha amatye, kunye nokusetyenzwa kwesinyithi kunye nezinto ezingezizo ezentsimbi ezinamandla aphantsi, njengentsimbi engwevu, ubhedu, i-aluminium, ilitye, isikhumba, irabha, njl.

Izinto

Iyunithi Isalathiso

Ukuqulunqwa kwemichiza

Yee-abrasives
Ubungakanani   SiC FC Fe2O3
F12-F90 % 98.5min 0.5 ubuninzi 0.6 ubuninzi
F100-F150 % 98.5min 0.3 ubuninzi 0.8 ubuninzi
F180-F220 % 987.0min 0.3 ubuninzi 1.2 ubuninzi
Kuba refractory
Uhlobo Ubungakanani   SiC FC Fe2O3
TN98 0-1mm

1-3mm

3-5mm

5-8mm

200umnatha

325umnatha

% 98.0min 1.0 ubuninzi 0.8 ubuninzi
TN97 % 97.0min 1.5 ubuninzi 1.0 ubuninzi
TN95 % 95.0min 2.5 ubuninzi 1.5 ubuninzi
TN90 % 90.0min 3.0 ubuninzi 2.5 ubuninzi
TN88 % 88.0min 3.5 ubuninzi 3.0 ubuninzi
TN85 % 85.0min 5.0 ubuninzi 3.5 ubuninzi
Indawo yokunyibilika 2250
Ukuchasa 1900
Ubuninzi bokwenyani g/cm3 3.20min
Unizi lolwapho kuyiwa khona g/cm3 1.2-1.6
Mohs ubulukhuni --- 9.30min
Umbala --- Mnyama

Inkcazo

I-Black Silicon Carbide iveliswa ngokudityaniswa kwesanti yequartz, i-anthracite kunye ne-silica ekumgangatho ophezulu kwiziko lokumelana nombane.Iibhloko ze-SiC ezinobuninzi be-crystal compact structure kufuphi nengundoqo zikhethwe ngokucophelela njengezinto eziluhlaza.Ngokusebenzisa iasidi egqibeleleyo kunye nokuhlamba kwamanzi emva kokutyumzwa, umxholo wekhabhoni uncitshiswe ubuncinci kwaye ke iikristale ezicwebezelayo ezikhanyayo zifunyenwe.I-brittle kwaye ibukhali, kwaye ine-conductivity ethile kunye ne-thermal conductivity.

Ineempawu zeekhemikhali ezizinzile, i-coefficient ephezulu ye-coefficient, i-coefficient ephantsi yokwandiswa kwe-thermal kunye nokumelana okugqwesileyo kokugqoka, kwaye ifanelekile kwizicelo eziphikisayo kunye nokugaya.